sur ge overload rating to 100a peak 28 31 35 42 56 70 105 140 v 0.85 0.92 40 45 50 60 80 100 150 200 v = 10a v mbr1040 ? mbr10200 1 of 2 c/w pf 0.70 v 1080 mbr characteristic symbol cla ssification rating 94v-o plastic case material has ul flammability guard ring die construction for use in low voltage application low power loss, high efficiency ideally suited for automatic assembly 10.0a sc hott ky barrier diode mbr1040 ? mbr10200 features mec h anical data maximum ra t ings and electrical characteristics @t a =25c unl ess ot herwise specified single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. ! schottky b arrier chip ! ! ! ! ! ! peak repet itive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r rms revers e voltage v r(rms) average rec tified output current @t l =75c (not e 1) i o 10.0 a non-repeti t ive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 120 a forward vol t age @i f fm pea k reverse current @t a = 25c a t rated dc blocking voltage @t a = 100c i rm 0.1 20 ma ty pi cal junction capacitance (note 2) c j ty pi cal thermal resistance (note 1) r ja operati ng and s torage temperature range t j , t stg -65 to +150 c note: 1. v alid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case. 2. measured at 1.0 mhz and applied reverse voltage of 4.0v d.c. 1040 mbr 1045 mbr 1050 mbr 1060 mbr mbr 10100 mbr 10150 units 0.80 350 280 200 3.5 2.0 z ibo seno electronic engineering co., ltd. www.senocn.com mbr 10200 100 mo unting position: any polarity: see diagram minals: plated leads solderable per case: to-220ac, molded plastic ! ! ter mil-std-202, method 208 ! ! ! lead free: for rohs / lead free version pin 1 + + pin 3 - case l m a n p d e k c b g 1 3 j h to-220ac dim min max a 14.22 15.88 b 9.57 10.57 c 2.54 3.43 d 5.80 6.80 e 6.35 g 12.70 14.73 h 4.88 5.28 j 0.51 1.14 k 3.53 4.14 l 3.56 4.83 m 1.07 1.47 n 0.30 0.64 p 2.03 2.92 all dimensions in mm a l l d a t a s h e e t
mbr1040 ? mbr10200 2 of 2 mbr1040 ? mbr10200 z ibo seno electronic engineering co., ltd. www.senocn.com fig.1- forward current derating curve fig.4- typical instantaneous forward characteristics fig.3- typical reverse characteristics instantaneous for ward current amperes instantaneous for ward voltage, volts 40 10 8 6 4 2 1.0 .8 .6 .4 .2 .1 .5 .6 .7 .8 .9 1.0 1.1 1.2 50v~60v 80v~100v 150v~200v 40v~45v instantaneous reverse current ,ma percent of inst ant aneous reverse voltage,(%) 120 140 10 1.0 0.1 .01 .001 0204 06 080100 o t j =100 c o j t= 75 c o j t= 25 c o case temperature, c 10.0 8.0 4.0 0 2.0 6.0 0 20 40 60 80 100 120 140 160 180 average for w ard rectified current amperes = 15 0 -20 0v fig.2- maximum non - repetitive surge current peak forw ard surge current amperes no. of cycle a t 60hz 150 120 110 90 70 50 30 20 10 1 2 5 10 20 50 100 8.3ms single half since-wave jedec method = 4 0 - 10 0v 4 0 - 6 0v 80 - 20 0v a l l d a t a s h e e t
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